| PART |
Description |
Maker |
| TGA2216-SM TGA2216-SM-15 |
0.1 3.0GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
| T1G6001032-SM-15 T1G6001032-SM-EVB1 |
10W, 32V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| RFHA3832 |
10W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
| NTE7105 |
Integrated Circuit Dual 10W 10W Stereo Amplifier
|
NTE Electronics
|
| SZM-2066Z |
2.4-2.7GHz 2W Power Amplifier
|
http://
Sirenza Microdevices, Inc
|
| EIA1011-4P |
10.7-11.7GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
| RF5602WB33PCK-410 RF5602HWLPCK-410 RF5602SR RF5602 |
3.0V TO 5.0V, 2.3GHz TO 2.7GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
| EIA1819-1P EIB1819-1P |
18.7-19.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
